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MAX17600–MAX17605
4A Sink /Source Current, 12ns, Dual MOSFET Drivers
ELECTRICAL CHARACTERISTICS (continued)
(V DD = 12V, C L = 0F, at T A = -40 N C to +125 N C, unless otherwise noted. Typical values are specified at T A = +25 N C. Parameters
specified at V DD = 4V apply to the TTL versions only.) (Note 2)
PARAMETER
Turn-On Delay Time
Turn-Off Delay Time
SYMBOL
t D-ON
t D-OFF
C L = 1nF
C L = 1nF
CONDITIONS
MIN
TYP
12
12
MAX
UNITS
ns
ns
MATCHING CHARACTERISTICS (Note 3)
Matching Propagation Delays
Between Channel A and Channel B
V DD = 14V, C L = 10nF
8
ns
Note 2: All devices are production tested at T A = +25 N C. Limits over temperature are guaranteed by design.
Note 3: Design guaranteed by bench characterization. Limits are not production tested .
Note 4: For SOIC package options, these are only Typ parameters.
Typical Operating Characteristics
(C L = 1nF, T A = +25 N C, unless otherwise noted.)
6.0
RISE TIME vs. SUPPLY VOLTAGE
(C OUT_ = 1nF)
5.0
FALL TIME vs. SUPPLY VOLTAGE
(C OUT_ = 1nF)
PROPAGATION DELAY TIME (LOW TO HIGH)
vs. SUPPLY VOLTAGE (C OUT_ = 1nF)
18
5.5
5.0
4.5
T A = +125°C
T A = +85°C
T A = +25°C
4.5
4.0
3.5
T A = +125° C
T A = +25°C
T A = +85°C
16
14
T A = +125°C
T A = +85°C
T A = +25°C
4.0
3.5
3.0
12
3.0
2.5
2.0
T A = 0°C
T A = -40°C
2.5
2.0
1.5
T A = 0°C
T A = -40°C
10
8
T A = 0°C
T A = -40°C
4
6
8
10
12
14
4
6
8
10
12
14
4
6
8
10
12
14
SUPPLY VOLTAGE, V DD (V)
PROPAGATION DELAY TIME (HIGH TO LOW)
vs. SUPPLY VOLTAGE (C OUT_ = 1nF)
18
3.0
SUPPLY VOLTAGE, V DD (V)
SUPPLY CURRENT vs. SUPPLY VOLTAGE
(C OUT_ = 0nF)
SUPPLY VOLTAGE, V DD (V)
SUPPLY CURRRENT vs. LOAD CAPACITANCE
(V DD = 12V, C OUTB = 0nF)
140
16
T A = +125°C
2.5
1MHz
130
120
110
14
T A = +85°C
T A = +25°C
2.0
500kHz
100
90
80
500kHz
12
10
T A = 0°C
T A = -40°C
1.5
1.0
100kHz
NO SWITCHING
70
60
50
40
30
20
10
1MHz
100kHz
NO
SWITCHING
8
4
6
8
10
12
14
0.5
4
6
8
10
12
14
0
0
1
2
3
4
5
6
7
8
9
10
SUPPLY VOLTAGE, V DD (V)
SUPPLY VOLTAGE, V DD (V)
LOAD CAPACITANCE (nF)
4
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